Chlorine-hydrogen ECR Etching of InGaAsP/InP

Welty, R.J.,Reinhardt, C.E.,Han, I.Y., Du, Y.

crossref（2003）

Cited 1|Views3

Key words

Fabry-Perot resonators,III-V semiconductors,atomic force microscopy,cyclotron resonance,etching,gallium compounds,indium compounds,optical waveguides,surface roughness,1.01 nm,250 W,3.67 nm,850 W,AFM measurement,Fabry-Perot resonance,InGaAsP-InP,InP based materials,atomic force microscopy,chlorine-hydrogen ECR etching,electron cyclotron resonance,optical waveguides,scattering loss,sidewall rms roughness,surface roughness

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