Reliability and Microstructure Characterization of Through-Silicon Vias (TSV) at Different Aspect Ratios Using EBSD-Raman Spectroscopy
2025 IEEE 75th Electronic Components and Technology Conference (ECTC)（2025）
Key words
Heterogeneous integration,thermomechanical reliability,through silicon via (TSV),Raman spectroscopy,electron backscatter diffraction
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