Heterogeneous 3-D Sequential CFET with Strain-Engineered Ge (100) Top-Channel Pmosfet on Bulk Si (100) Nmosfet

Hyeongrak Lim,Seong Kwang Kim, Seung Woo Lee, Youngkeun Park, Jaejoong Jeong, Hojin Jeong,Jinha Lim, Dae-Myeong Geum,Jaehoon Han,Younghyun Kim, Jaeyong Jeong,Byung Jin Cho,Sanghyeon Kim

IEEE Transactions on Electron Devices（2025）

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关键词

Ge-on-insulator (Ge-OI),heterogeneous 3-D sequential CFETs (H3D seqCFETs),monolithic 3-D (M3D) integration,MOSFETs,strained Ge (sGe),wafer bonding

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