Comprehensive Analysis of Deep Level Effects and In-Situ Photoionization in 0.15 $\mu \mathrm{m}$ Buffer-Free AIGaN/GaN HEMTs for RF Applications

Francesco De Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito,Carlo De Santi,Fabiana Rampazzo,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni

2025 IEEE International Reliability Physics Symposium (IRPS)（2025）

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关键词

Buffer-free AIGaN/GaN HEMTs,deep level effects,drain current transient,photoionization

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