Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET

Yajing Ding, Saifei Dai, Xiaoqing Sun, Xianzhou Shao,Min Liao, Fengbin Tian, Xinpei Jia, Hongyang Fan, Yuanyuan Zhao, Tao Hu, Mingkai Bai, Xiaoyu Ke, Junshuai Chai,Jinjuan Xiang,Kai Han,Hao Xu,Xiaolei Wang,Wenwu Wang,Tianchun Ye

IEEE Transactions on Electron Devices（2025）

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Key words

Charge trapping,endurance,Hf x Zr 1-x O,interface,memory window (MW),Si ferroelectric field-effect transistor (FeFET),spontaneous polarization (P s )

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