Performance of a Side-Gap-Triggered Vanadium-Compensated 4H-Sic Photoconductive Switch
IEEE Transactions on Electron Devices(2025)
关键词
Lifetime,photoconductive semiconductor switch (PCSS),photogeneration rate,side-gap trigger mode,vanadium-compensation semi-insulating (VCSI) 4H-silicon carbide (4H-SiC)
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