Exploration of Interplay Between Charge Trapping Dynamics and Polarization Switching in Α-In2se3 Ferroelectric Semiconductor FETs

Minah Park, Jaewook Yoo, Seohyeon Park, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Sojin Jung, Gang Qiu, Sungjune Park, TaeWan Kim,Peide D. Ye, Hagyoul Bae

IEEE Electron Device Letters（2025）

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关键词

Alpha-indium selenide (α-In2Se3),ferroelectric semiconductor field-effect transistors (FeS-FETs),intrinsic trap states (Dtrap),modified conductance method (MCM),nonvolatile memory device

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