A One-Transistor DRAM Memory Cell Using HfO2-Based Ferroelectric-Assisted Charge Trapping Concept

Mingkai Bai, Xiaoqing Sun, Runhao Han, Yajing Ding, Tao Hu, Yuanyuan Zhao, Saifei Dai,Kai Han, Junshuai Chai,Hao Xu,Xiaolei Wang,Wenwu Wang,Tianchun Ye

IEEE Transactions on Electron Devices（2025）

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Key words

Charge trapping,ferroelectric,HfO 2,one-transistor-dynamic random access memory (1T-DRAM)

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