Comparison of Output Characteristics of Vanadium-Compensated 4H-Sic PCSS at 1064 Nm and 355 Nm

Fuyin Liu, Ripin Wang, Ting He, Bohan Li, Yuchen Liu, Muyu Yi, Langning Wang,Tao Xun

IEEE Electron Device Letters（2025）

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Photoconductive semiconductor switches (PCSSs),vanadium-compensated 4H-silicon carbide (SiC),response time,photoelectric conversion efficiency,power capacity

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