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Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-Sic Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation

Journal of Electronic Materials(2025)

Cited 0|Views2
Key words
Silicon carbide,low-angle grain boundary,crystal growth,TED LAGB effective tilt,radial temperature gradient,prismatic slip dislocations
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