BEOL-Compatible Non-Volatile Capacitive Synapse with ALD W-Doped In2O3 Semiconductor Layer
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
Synapse,Atomic Layer Deposition,Semiconductor Layer,Impedance,Figure Of Merit,Overlap Area,Recorded Values,Cycling,Footprint,3D Structure,Inductively Coupled Plasma,X-ray Photoelectron Spectroscopy,Voltage Drop,Carrier Concentration,Inference Accuracy,Top Electrode,Reactive Ion Etching,Grazing Incidence X-ray Diffraction,Rapid Thermal Annealing,Memory Window,On-off Ratio
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