Fully Subtractive Ru Topvia Interconnects with Minimum 9 Nm-Space Airgap for RC Performance and Reliability Enhancement As Post-Cu Interconnects

K. Motoyama, J. Choi, H. Huang,C. Penny,N. Lanzillo, J. Kim, J. Oh, G. Kim, J. Lee, S. Park, T. Kim, S. Hosadurga, D. Jayachandran, H. Zhang, S. Katakam, G. Oyibo,W-T. Tseng, B. Antonovich, N. Latham, W. Li, C. Yang, S. Munnangi, A. Simon, S. Fan,J. Arnold, T. Yamashita,K. Choi,K-I. Seo,D. Guo,H. Bu

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Reliability Enhancement,Low Capacity,Future Technologies,Adjacent Lines,Impedance,Thermal Treatment,Reduction In Capacity,Resistant Lines,Integration Scheme,Plasma Etching,Line Height,Volume Conductor,Subtraction Process

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