An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
High Voltage,High Electron Mobility Transistors,Inherent Protection,Synchronous Switching,Active Region,Voltage-gated,Electron Hole Pairs,Channel Density,Gate Stack,Conductive,Ionizing Radiation,Field-effect Transistors,Depletion Region,Secondary Ion Mass Spectrometry,Gate Electrode,P-n Junction,Switching Operation,Gate Region
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