ISO-Performance N-Type and P-Type MOSFETs on Densely Aligned CNT Array Enabled by Self-Aligned Extension Doping with Barrier Booster

Shengman Li,Donglai Zhong,Carlo Gilardi,Nathaniel Safron,Tzu-Ang Chao,Gilad Zeevi, Samantha Van Rijs, Andrew Denis Bechdolt,Matthias Passlack,Gregory Pitner,Iuliana Radu,H.-S. Philip Wong,Subhasish Mitra

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

Cited 0|Views8

Key words

Carbon Nanotubes,N-type MOSFET,Aligned Carbon Nanotube Arrays,Carrier Mobility,High Carrier Mobility,Metal Doping,Impedance,Charge Density,Process Flow,Electron Beam Lithography,Resistant Parasites,Schottky Barrier,Etching Time,Low-dimensional Materials,Minimal Leakage

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined