10 Kv, 250°C Operational, Enhancement-Mode Ga2O3 JFET with Charge-Balance and Hybrid-Drain Designs
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
Junction-gate Field-effect Transistor,Types Of Pain,Power Devices,Device Physics,Device Fabrication,Device Design,Negative Shift,Device Reliability,SiC MOSFET
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