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High-Performance Enhancement-Mode GaN P-Fet Fabricated with an Etch-Stop Process

Hengyuan Qi, Teng Li,Jingjing Yu,Jiawei Cui,Junjie Yang, Sihang Liu, Yunhong Lao,Han Yang,Xuelin Yang,Maojun Wang,Bo Shen,Yamin Zhang,Shiwei Feng,Meng Zhang,Jin Wei

IEEE Transactions on Electron Devices（2025）

Cited 0|Views7
Key words
Current density,enhancement mode (E mode),etch stop,gallium nitride (GaN) p-FET,gate recess,threshold voltage hysteresis
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