Comparative Performance Analysis of Dual FinFET and Gate-All-Around Triple Nanosheet FET for 5nm Node
2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)（2024）
关键词
DC figure of merit,Field Effect Transistor,FinFET,High-K dielectric,Nanosheet FET,TCAD simulation
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要