A New Generation GaN/SiC Monolithically Integrated Frequency Sources with Ultrahigh-Power Output Based on Thermal Resistance Calculation Model

Yazhou Dong,Jun Zhou, Huajie Liang, Tianchi Zhou, Shuhan Zhou, Xuan Zeng, Shixiong Liang,Guodong Gu,Lisen Zhang,Zhihong Feng, Hongqiang Wang, Qi Yang,Ziqiang Yang,Yaxin Zhang

IEEE Transactions on Microwave Theory and Techniques（2025）

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GaN/SiC monolithic integration,sub-terahertz (THz) frequency doublers,thermal resistance calculation model,ultrahigh-output power

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