Achieving 1-Nm-scale Equivalent Oxide Thickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches
IEEE Transactions on Electron Devices（2025）
关键词
2-D semiconductor,atomic layer deposition (ALD),equivalent oxide thickness (EOT),gate-stack,MoS 2,threshold voltage (V T ),triethylaluminum (TEA)
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