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Charge Balance Design of 1200-V E-mode P-Gan Gate HEMT Towards Enhanced Breakdown Voltage and Dynamic Stability

Junjie Yang,Jingjing Yu,Jiawei Cui, Sihang Liu,Teng Li, Yunhong Lao, Hao Chang,Maojun Wang,Jinyan Wang,Xiaosen Liu,Jin Wei,Bo Shen

IEEE Electron Device Letters（2025）

引用 0|浏览17
关键词
p-GaN gate HEMT,E-mode,superjunction,breakdown voltage,dynamic RoNO
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