谷歌浏览器插件
订阅小程序
在清言上使用
VIPCreated with Sketch.

Sub-Nanometer Equivalent Oxide Thickness and Threshold Voltage Control Enabled by Silicon Seed Layer on Monolayer MoS2 Transistors.

Jung-Soo Ko,Sol Lee,Robert K. A. Bennett,Kirstin Schauble,Marc Jaikissoon,Kathryn Neilson, Anh Tuan Hoang,Andrew J. Mannix,Kwanpyo Kim,Krishna C. Saraswat,Eric Pop

NANO LETTERS（2025）

引用 0|浏览4
关键词
2D materials,transistors,equivalent oxidethickness,gate stack,threshold voltage
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要