Unique Monotonic Positive Shifts in Threshold Voltages of Ga2O3-on-SiC MOSFETs under Both Unipolar Positive and Negative Bias Stresses
IEEE Transactions on Electron Devices（2025）
关键词
Ga 2 O 3 -on-SiC (GaOSiC) MOSFET,gallium oxide,heterogeneous,instability,unipolar bias stress
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