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New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si–SiO2 Interface Traps

Huimin Geng,Enhao Guan,Jianqun Yang,Gang Lv,Weiqi Li,Zhongli Liu,Wenzhu Shao,Xingji Li

IEEE Transactions on Electron Devices（2025）

Cited 0|Views2
Key words
Gate sweep (GS),interface traps,oxide charges,recombination enhanced defect reaction (REDR)
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