Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases
IEEE Transactions on Electron Devices（2025）
Key words
2-D electron gas (2DEG),2-D hole gas (2DHG),charge trapping,double heterostructure (DH),gallium nitride,metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET)
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