Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin P-Gan Design
IEEE Transactions on Electron Devices（2025）
关键词
1200-V OFF-state bias stress,drain-side p-GaN,dynamic resistance degradation,GaN-on-sapphire,p-GaN HEMT
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