Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes

Leming Jiao,Zuopu Zhou,Zijie Zheng,Kaizhen Han,Qiwen Kong, Xiaolin Wang, Haiwen Xu, Jishen Zhang,Chen Sun,Yuye Kang,Gengchiau Liang,Xiao Gong

IEEE Transactions on Electron Devices（2025）

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关键词

Diode,ferroelectric field-effect transistor (FeFET),ferroelectric-modulated diode (FMD),Zr-doped HfO2 (HZO),InGaZnO $_{\textit{x}}$ (IGZO),model,memory window (MW)

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