A Novel Approach to Integrating Thermal Performance and Total Ionizing Dose Hardening in Void-Embedded Silicon-on-Insulator MOSFET
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
MOSFET,Logic gates,Performance evaluation,Silicon-on-insulator,Heating systems,Substrates,Silicon,Transmission electron microscopy,Nanoscale devices,Fabrication,Heat sinking capability,nanoscale-embedded chamber,total ionizing dose (TID) hardening,void-embedded silicon on insulator (VESOI)
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