Capacitance Boosting of Antiferroelectric-Hf0.2Zr0.8O2/Al2 O3 Blocking Layer Using Y2O3 Interfacial Layer for Charge Trap Flash Memory
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS（2025）
Key words
antiferroelectric,blocking layers,capacitance boosting,Hf1-xZrxO2,Y2O3
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