Self-Limiting Formation of NiSi2 to Improve NiSi2-Induced Crystallization and Develop High-Performance Poly-Si FETs with Self-Aligned NiSi2-Induced Lateral Crystallization

Shujuan Mao,Xianglie Sun,Jinbiao Liu,Guobin Bai, Chenchen Zhang, Wenjuan Xiong,Jianfeng Gao,Jun Luo,Guilei Wang,Zhao Chao

IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）

引用 0|浏览6

关键词

Silicides,Nickel alloys,Silicon,Crystallization,Field effect transistors,X-ray scattering,Three-dimensional displays,Scanning electron microscopy,Fabrication,NiSi2,Sputtering,NiSi2-induced,poly-Si field effect transistors (FETs),self-limiting formation,poly-Si field effect transistors (FETs),self-limiting formation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要