An Al-Drain Silicon Transistor with Ultra-steep Subthreshold Slope and Low Operating Voltage

Zhibo Chen, Weiao Chen, Baowei Yuan, Yingxin Chen, Chengjie Tang,Weizhuo Gan,Chunsong Zhao,Zhaozhao Hou, Qiang Zhang, Jiachen Gao, Jiale Wang,Jeffrey Xu,Shisheng Xiong,Jing Wan, Ye Lu

IEEE Electron Device Letters（2025）

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Key words

Field Effect Transistor,Al drain,Impact Ionization,Ultra-steep Sub-threshold Swing,Low Operating Voltage,Silicon-on-Insulator (SOI)

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