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Write Error Reduction in Magnetic Tunnel Junctions for Voltage-Controlled Magnetoresistive Random Access Memory by Using Exchange Coupled Free Layer

Lui Sakai,Yutaka Higo,Masanori Hosomi,Rie Matsumoto,Takayuki Nozaki,Shinji Yuasa,Hiroshi Imamura

APPLIED PHYSICS LETTERS（2025）

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