Building Bilayer MoS2 with Versatile Morphologies Via Etching-And-Growth Coexisting Method.

Yibiao Feng, Zihan Zhao, Tiantian Zhang, Zejun Luo,Jian Yang, Boyu Xu,Nan Liu,Jiacai Nie,Jun Zhou,Ruifen Dou

SMALL（2025）

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Key words

chemical vapor deposition (CVD),etching,growth mechanism,MoS2 bilayer,precursor concentration gradient

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