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AlScN/GaN HEMTs with 4 A/mm On-Current and Maximum Oscillation Frequency >130 GHz

Kazuki Nomoto,Joseph Casamento, Thai-Son Nguyen,Lei Li,Hyunjea Lee,Chandrashekhar Savant,Austin Lee Hickman,Takuya Maeda,Jimy Encomendero,Ved Gund,Timothy Vasen,Shamima Afroz,Daniel Hannan,James C. M. Hwang,Debdeep Jena,Huili Grace Xing

APPLIED PHYSICS EXPRESS（2025）

引用 0|浏览4
关键词
field effect transistors,heterostructures,ohmic contacts,alloys,nitrides,semiconductors,electrical properties and parameters
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