Failure Mechanism of 1200-V SiC MOSFET with Embedded Schottky Barrier Diode under Short-Circuit Condition
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Silicon carbide,MOSFET,Current density,Schottky diodes,Logic gates,Hands,Failure analysis,Temperature distribution,P-n junctions,Voltage measurement,Embedded SBD,failure mechanism,leakage current,short-circuit,silicon carbide (SiC) MOSFETs
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