谷歌浏览器插件
订阅小程序
在清言上使用

Investigation on Short-Circuit Characteristics and Failure Modes of SiC Planar MOSFETs with Linear and Hexagonal Topologies

Huan Wu,Houcai Luo,Jingping Zhang, Bofeng Zheng, Ruonan Wang, G.Q. Zhang,Xianping Chen

IEEE Journal of Emerging and Selected Topics in Power Electronics(2025)

引用 0|浏览2
关键词
Short-circuit,gate failure,thermal runaway,cell topology,failure mechanism,MOSFETs,silicon carbide
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要