Current and Gate Capacitance Models of Amorphous InGaZnO Transistors with Double-Layer Electrolytic Gate Insulation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Capacitance,Logic gates,Electrolytes,Electric potential,Voltage,Insulators,Resistance,Ions,Transistors,Impedance,Electrolytic double-layer gate insulation transistor (EDLGIT),equivalent capacitance,surface potential
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