A Novel Approach for Observing Band Gap Crossings Using the SIMS Technique in Pb1-x Sn X Te
JOURNAL OF SEMICONDUCTORS（2024）
Key words
SIMS,TCI,ionization probability,work function,Pb<sub>1-<italic>x</italic> </sub>Sn<sub> <italic>x</italic> </sub>Te,band-gap closing
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