订阅小程序
旧版功能

Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy

Matthew T. Hardy,Andrew C. Lang,James L. Hart,Eric N. Jin,Neeraj Nepal,Vikrant J. Gokhale,Brian P. Downey,D. Scott Katzer,Peter M. Litwin,Maria Gabriela Sales,Tyler A. Growden,Virginia D. Wheeler

JOURNAL OF ELECTRONIC MATERIALS（2024）

引用 0|浏览2
关键词
ScAlN,AlScN,molecular beam epitaxy,heteroepitaxy,anomalously oriented grains,stress
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要