FRAM Array: A Device and Circuit Interaction Study at Advanced Technology Nodes
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Random access memory,Nonvolatile memory,Ferroelectric films,Integrated circuit modeling,Capacitors,Iron,Equivalent circuits,Integrated circuit interconnections,Computer architecture,Hysteresis,Ferroelectric random access memory (FRAM),hysteresis loop,read latency,sense margin
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