High-Current E-Mode InGaN/GaN P-Fet on P-Gan Gate HEMT Platform
IEEE ELECTRON DEVICE LETTERS（2025）
Key words
Logic gates,HEMTs,Two dimensional hole gas,Circuits,Gallium nitride,Current density,Logic,Wide band gap semiconductors,Fabrication,Epitaxial growth,InGaN/GaN p-FET,InGaN p-FET,GaN complementary logic,two-dimensional hole gas (2DHG),E-mode
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