Enhanced 2DEG Confinement in GaN-based HEMTs: Exploring the Role of AlGaN Back Barriers Through Schrödinger - Poisson Simulations and Experimental Validation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING（2025）
关键词
HEMTs,GaN,Back barrier,Schro<spacing diaeresis>dinger,Poisson (SCSP),2DEG confinement
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