Monolithic 3D Integration of 1T1C AFeRAM with InGaZnO/InO Dual-Channel FET and AFE ZrO2 Capacitor for Low-Power and High-Density Embedded Nonvolatile Memory

Minglei Ma,Gaobo Lin,Jiacheng Xu,Haoji Qian,Rongzong Shen,Miaomiao Zhang, Yian Ding,Bing Chen,Ran Cheng,Yan Liu,Jiajia Chen,Chengji Jin,Genquan Han

IEEE ELECTRON DEVICE LETTERS（2025）

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关键词

Field effect transistors,Capacitors,Logic gates,Tin,Nonvolatile memory,Hafnium oxide,Stress,Annealing,Random access memory,Fabrication,ZrO2-based antiferroelectric (AFE),amorphous oxide semiconductor (AOS),embedded nonvolatile memory (eNVM)

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