A 10 Gb/s Single-Ended Receiver Using Time Gap Sense Amplifier for Next-Generation HBM

Taehwan Kim,Changmin Sim,Seungwoo Park,Jinwoo Park,Seongcheol Kim, Hwaseok Shin, Junseob So, Seon-Been Lee,Youngwook Kwon,Chulwoo Kim

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS（2025）

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Through-silicon vias,Latches,Circuits,Bandwidth,Transistors,Receivers,Power demand,Pins,Clocks,Voltage control,High-bandwidth memory (HBM),receiver (RX),sense amplifier (SA),time domain,through-silicon via (TSV) I/O

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