Α-Ga2o3 Photodetector with Responsivity over A/W Level Based on Sn-Assisted Mist-CVD
IEEE SENSORS JOURNAL（2025）
关键词
Epitaxial growth,Gallium,Sensors,Photodetectors,Substrates,Scanning electron microscopy,Photonic band gap,X-ray scattering,Transmission electron microscopy,Tin,alpha-Ga2O3,deep ultraviolet (DUV) photodetectors (PDs),mist chemical vapor deposition (mist-CVD),tin (Sn)-assisted
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