(Ultra-)Wide-bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Performance evaluation,Doping,Power electronics,Silicon carbide,Electric breakdown,Photonic band gap,Silicon,Permittivity,P-n junctions,Fabrication,Breakdown voltage (BV),Ga2O3,GaN,NiO,power electronics,superjunction (SJ),ultra wide bandgap (UWBG),wide bandgap (WBG)
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