Comparative Study of SiC Microstructure Neutron Detectors
IEEE Trans Instrum Meas（2025）
关键词
Neutrons,Detectors,Microstructure,Silicon carbide,Voltage measurement,Semiconductor device measurement,Nickel,Leakage currents,Current measurement,Silicon,4H-SiC,detection efficiency,high temperature,microstructure neutron detectors,neutron irradiation,transient current pulse
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