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Investigation of 100-Kw Class Photoconductive Semiconductor Device with Wide Bandwidth Using Resonance Enhancement and Parameter Decoupling

IEEE TRANSACTIONS ON ELECTRON DEVICES(2024)

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Silicon carbide,Bandwidth,Radio frequency,Power generation,Electrodes,Resonant frequency,Resonance,Mathematical models,Integrated circuit modeling,Voltage,Carrier lifetime evaluation,high-power radio frequency (RF),material-circuit parameter decoupling,photoconductive semiconductor device,resonance enhancement
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