Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs
2024 46TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD 2024（2024）
Key words
High Electron Mobility Transistors,Human Body Model,Transistor Layout,Benchmark,Schottky Diode,Failure Mechanism,I-V Curves,Voltage Difference,Silicon Carbide,Peak Voltage,Total Width,Negative Stress,Large Width,Dielectric Breakdown,Geometric Size,Gallium Nitride,Metal Gate,Gate Length,Device Width,Breakdown Electric Field
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