HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Iron,Capacitors,Logic gates,FeFETs,Voltage,Hafnium oxide,Silicon,Endurance,ferroelectric field-effect transistor (FeFET),interface charge trapping,operating voltage,retention
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