Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY（2024）
关键词
Ions,Gallium,Anodes,Electric fields,Semiconductor process modeling,Chlorine,Tunneling,Degradation,diode,gallium-oxide (Ga2O3),heterojunction,heavy ion,single-event burnout (SEB)
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